• DocumentCode
    1045476
  • Title

    New experimental technique for fast and accurate MOSFET threshold extraction

  • Author

    Corsi, F. ; Marzocca, Cristoforo

  • Author_Institution
    Politecnico di Bari, Italy
  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1358
  • Lastpage
    1360
  • Abstract
    Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of IDS and VGS. The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.
  • Keywords
    automatic testing; insulated gate field effect transistors; semiconductor device testing; MOSFET; automated tool; experimental technique; threshold extraction; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930910
  • Filename
    274852