DocumentCode
1045476
Title
New experimental technique for fast and accurate MOSFET threshold extraction
Author
Corsi, F. ; Marzocca, Cristoforo
Author_Institution
Politecnico di Bari, Italy
Volume
29
Issue
15
fYear
1993
fDate
7/22/1993 12:00:00 AM
Firstpage
1358
Lastpage
1360
Abstract
Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of IDS and VGS. The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.
Keywords
automatic testing; insulated gate field effect transistors; semiconductor device testing; MOSFET; automated tool; experimental technique; threshold extraction; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930910
Filename
274852
Link To Document