Title :
MOCVD-grown InAlAs/InGaAs HEMTs with fT=200 GHz
Author :
Hong, Woo-Pyo ; Lin, P.S.D. ; Caneau, Catherine ; Song, J.I.
fDate :
7/22/1993 12:00:00 AM
Abstract :
The performance of 0.15 mu m gate InAlAs/InGaAs HEMTs grown by MOCVD is reported. The HEMT layer structure exhibited excellent transport properties, indicating the high quality of the heterointerface. The devices fabricated using a T-gate process showed an fT of 200 GHz and fmax of 230 GHz extrapolated from 26 GHz at -6dB/octave. These are the best speed performances of any MOCVD-grown FETs. The results clearly demonstrate that MOCVD is a powerful growth technique for materials for high-speed applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.15 micron; 200 GHz; 230 GHz; HEMT layer structure; InAlAs-InGaAs; MOCVD-grown; T-gate process; growth technique; heterointerface; high-speed applications; transport properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930912
