DocumentCode
1045529
Title
Some developments of electrodeposited wire analog memory
Author
Konishi, Susumu ; Matsushita, Shunsuke ; Sakurai, Yoshifumi
Author_Institution
University of Osaka, Toyonaka, Osaka, Japan.
Volume
7
Issue
1
fYear
1971
fDate
3/1/1971 12:00:00 AM
Firstpage
179
Lastpage
182
Abstract
The basic readout and write-in characteristics of NDRO analog memory elements composed of electrodeposited Permalloy wires were reported previously by the authors. The output signal was the second harmonic voltage of the interrogation sinusoidal-wave field (225 kHz) applied along the hard axis, and the amplitude was proportional to the product of the set flux level and square of the interrogation field. This report deals with some details of the write-in characteristics, linearization of write-in characteristics by a negative feedback circuit, and readout of the stored flux level by a fundamental component of the induced voltage, selection schemes are also discussed for practical use.
Keywords
Analog memories; NDRO memories; Permalloy wire memories; Plated-wire memories; Analog memory; Anisotropic magnetoresistance; Feedback circuits; Magnetic anisotropy; Magnetization; Negative feedback; Perpendicular magnetic anisotropy; Space vector pulse width modulation; Voltage; Wire;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1971.1066999
Filename
1066999
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