• DocumentCode
    1045589
  • Title

    Method for plotting frequency cutoff measurements for GaAs varactor diodes

  • Author

    Orman, C.

  • Author_Institution
    Alpha Industries, Inc., Woburn, Mass.
  • Volume
    20
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    653
  • Lastpage
    655
  • Abstract
    Frequency cutoff for GaAs varactor diodes of diffused-P+-n-epitaxial n+-substrate construction can be plotted so as to conveniently show dependence of diode cutoff as measured at 10 GHz on diode n-region thickness and substrate resistivity. The measured data fit a model for the diode where the zero bias junction capacitance C_{j0} is in series with a junction resistance Rjthat is proportional to 1/C_{j0} , and a resistance RXthat is constant. Rjis the resistance of the diode n-region and the p+-diffused region, and is primarily dependent on the n-region thickness. RXis dependent on diode spreading resistance, and varies with substrate resistivity. RXis about 1 Ω for usual substrate material.
  • Keywords
    Capacitance; Cutoff frequency; Electric resistance; Electron devices; Frequency measurement; Gallium arsenide; Semiconductor diodes; Substrates; Thickness measurement; Varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17718
  • Filename
    1477375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045589