Title :
Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors
Author :
Hjalmarson, Harold P. ; Pease, Ronald L. ; Devine, Roderick A B
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity (ELDRS).
Keywords :
bipolar transistors; bipolar transistors; enhanced low dose-rate sensitivity; ionizing radiation; radiation dose-rate sensitivity; Bipolar transistors; Charge carrier processes; Equations; Excitons; Hydrogen; Ionizing radiation; Kinetic theory; Laboratories; Potential energy; Spontaneous emission; Bimolecular reaction; ELDRS; bipolar junction transistor; cracking; dimerization; dose rate; excess base current; hole; hydrogen; interface trap; kinetics; proton; radiation; recombination; silicon dioxide;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007487
