• DocumentCode
    1045598
  • Title

    Defect density distribution for LSI yield calculations

  • Author

    Stapper, Charles H.

  • Author_Institution
    IBM Corporation, Essex Junction, Vt.
  • Volume
    20
  • Issue
    7
  • fYear
    1973
  • fDate
    7/1/1973 12:00:00 AM
  • Firstpage
    655
  • Lastpage
    657
  • Abstract
    The experimental determination of defect density distributions is described. These distributions are needed for calculating LSI yields. The defect densities appear to be distributed according to gamma distributions. An expression for the average yield for a semiconductor process is derived based on the results.
  • Keywords
    Capacitance; Conductivity; Contact resistance; Gallium arsenide; Large scale integration; Packaging; Semiconductor diodes; Skin; Substrates; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17719
  • Filename
    1477376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045598