DocumentCode :
1045602
Title :
Field-effect transistor based on organometallic Langmuir-Blodgett film
Author :
Pearson, C. ; Gibson, Jack E. ; Moore, A.J. ; Bryce, M.R. ; Petty, Michael C.
Author_Institution :
Durham Univ., UK
Volume :
29
Issue :
15
fYear :
1993
fDate :
7/22/1993 12:00:00 AM
Firstpage :
1377
Lastpage :
1378
Abstract :
The fabrication of a thin film transistor based on a Langmuir-Blodgett film of an organo-metallic charge-transfer material, (N-octadecylpyridinium)-Ni(dmit)2, is reported. Saturation in the source-drain current is observed at large gate voltages. The charge carrier mobility is approximately 0.2 cm2 V-1 s-1 after the organic layer has been doped with iodine.
Keywords :
Langmuir-Blodgett films; carrier mobility; conducting polymers; field effect transistors; molecular electronics; organic semiconductors; polymer films; thin film transistors; (N-octadecylpyridinium)-Ni(dmit) 2; FET; I doped organic layer; TFT; charge carrier mobility; fabrication; organo-metallic charge-transfer material; organometallic Langmuir-Blodgett film; thin film transistor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930922
Filename :
274864
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1045602
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