• DocumentCode
    1045602
  • Title

    Field-effect transistor based on organometallic Langmuir-Blodgett film

  • Author

    Pearson, C. ; Gibson, Jack E. ; Moore, A.J. ; Bryce, M.R. ; Petty, Michael C.

  • Author_Institution
    Durham Univ., UK
  • Volume
    29
  • Issue
    15
  • fYear
    1993
  • fDate
    7/22/1993 12:00:00 AM
  • Firstpage
    1377
  • Lastpage
    1378
  • Abstract
    The fabrication of a thin film transistor based on a Langmuir-Blodgett film of an organo-metallic charge-transfer material, (N-octadecylpyridinium)-Ni(dmit)2, is reported. Saturation in the source-drain current is observed at large gate voltages. The charge carrier mobility is approximately 0.2 cm2 V-1 s-1 after the organic layer has been doped with iodine.
  • Keywords
    Langmuir-Blodgett films; carrier mobility; conducting polymers; field effect transistors; molecular electronics; organic semiconductors; polymer films; thin film transistors; (N-octadecylpyridinium)-Ni(dmit) 2; FET; I doped organic layer; TFT; charge carrier mobility; fabrication; organo-metallic charge-transfer material; organometallic Langmuir-Blodgett film; thin film transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930922
  • Filename
    274864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045602