Title :
Transferred-electron oscillator device plane measurement
Author :
Howes, M.J. ; Jeremy, M.L.
Author_Institution :
University of Leeds, Leeds, England
fDate :
7/1/1973 12:00:00 AM
Abstract :
The first complete circuit characterization of a GaAs transferred-electron device operated in the delayed domain mode is presented. The detailed nature of the device plane indicates a strong dependence of device conductance and capacitance on frequency and RF amplitude.
Keywords :
Admittance; Economic forecasting; Electron devices; Injection-locked oscillators; Inspection; Integrated circuit yield; Logistics; Radio frequency; Semiconductor device modeling; Statistical distributions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17720
