Studies of Ni-B as an electrochemical metal migration barrier

Author

Ho, Syh-Ming ; Lian, Shy-Ming ; Chen, Ker-Ming ; Pan, Jing-Pin ; Wang, Tsung-Hsiung ; Hung, Aina

Author_Institution

Mater. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

19

Issue

2

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

202

Lastpage

207

Abstract

The effectiveness of electroless Ni-B as a barrier metal to prevent the electrochemical migration between adjacent copper lines on a polyimide dielectric substrate was studied by measuring the resistance of the polyimide dielectric and by observing the electrochemical migration between the fine lines by reflective electron microscope after stress conditions. The rate-determining step associated with the electrochemical migration was also discussed

Keywords

boron alloys; copper; diffusion barriers; electric resistance measurement; electromigration; electron microscopy; failure analysis; integrated circuit packaging; integrated circuit reliability; nickel alloys; voids (solid); Cu-NiB; IC packaging; barrier metal; electrochemical migration; fine lines; hillocks; migration barrier; migration induced failures; polyimide dielectric substrate; rate-determining step; reflective electron microscope; resistance measurement; stress conditions; voids; Circuit testing; Copper; Dielectric measurements; Dielectric substrates; Electrical resistance measurement; Electronic equipment testing; Failure analysis; Packaging; Polyimides; Stress measurement;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on

Publisher

ieee

ISSN

1070-9886

Type

jour

DOI

10.1109/95.506105

Filename

506105