Title :
Increased breakdown voltage of silicon-on-insulator Schottky diodes
Author :
Kang, B.R. ; Yoon, S.N. ; Cho, Young H. ; Cha, S.I. ; Choi, Y.I.
Author_Institution :
Ajou Univ., Seoul, South Korea
fDate :
7/22/1993 12:00:00 AM
Abstract :
A silicon-on-insulator Schottky diode with an etched mesa has been fabricated on silicon direct bonded wafer which exhibits a two-fold improvement in breakdown voltage. The fabrication method using V-groove etching requires no additional mask step. The breakdown voltage of the Schottky diodes with an etched mesa has been increased to 180 V, whereas it is 90 V for the planar Schottky diode.
Keywords :
Schottky-barrier diodes; electric breakdown of solids; etching; semiconductor technology; semiconductor-insulator boundaries; 180 V; SOI; Schottky diodes; Si direct bonded wafer; V-groove etching; breakdown voltage; etched mesa; fabrication method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930925
