Title :
Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection
Author :
Black, J.D. ; Ball, D.R., II ; Robinson, W.H. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Reed, R.A. ; Black, D.A. ; Warren, K.M. ; Tipton, A.D. ; Dodd, P.E. ; Haddad, N.F. ; Xapsos, M.A. ; Kim, H.S. ; Friendlich, M.
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN
Abstract :
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM´s state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
Keywords :
SRAM chips; SRAM single event upset; direct charge collection; multiple node charge collection; single node charge collection; static random access memories; well-collapse source-injection mode; CMOS technology; Laboratories; MOSFET circuits; NASA; Photoconductivity; Random access memory; SRAM chips; Single event upset; Space technology; Testing; Heavy ion testing; SRAM; multiple cell upset; single event modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007231
