DocumentCode :
1045724
Title :
The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region
Author :
Bulucea, Constantin D. ; Prisecaru, Dorel C.
Author_Institution :
CCPCE/IPRS-Baneasa, Bucharest, Romania
Volume :
20
Issue :
8
fYear :
1973
fDate :
8/1/1973 12:00:00 AM
Firstpage :
692
Lastpage :
701
Abstract :
The influence of carrier generation within the space-charge regions of silicon p-n junctions upon their breakdown characteristics is analyzed. Universal plots for the calculation of the total multiplication in one-sided silicon junctions versus voltage and substrate concentration are given, which take into account both injection and generation of initiating carriers. It is shown that the multiplication factor 
of practical (i.e., generation-dominated) silicon junctions differs from the pure hole-pure electron multiplication factors Mp and Mn and ranges between them, i.e., 
. Its calculated voltage dependence is well approximated by Miller\´s relationship with an exponent 
between 4 and 7 for impurity concentrations in the substrate between 1014and 1017cm-3.
of practical (i.e., generation-dominated) silicon junctions differs from the pure hole-pure electron multiplication factors M . Its calculated voltage dependence is well approximated by Miller\´s relationship with an exponent between 4 and 7 for impurity concentrations in the substrate between 1014and 1017cm-3.Keywords :
Avalanche breakdown; Charge carrier processes; Equations; Germanium; Impurities; Marine vehicles; P-n junctions; Silicon; Thermal factors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17730
Filename :
1477387
Link To Document :
