Title :
Integrated reverse-recovery model of the power bipolar diode for SPICE3
Author :
Conway, N.J. ; Lacy, J.G.
Author_Institution :
Univ. Coll. Dublin, Ireland
fDate :
7/22/1993 12:00:00 AM
Abstract :
A new circuit-simulation model for the reverse-recovery behaviour of the high-power bipolar diode, based on the device physics, is described. The model is implemented directly into the SPICE3 circuit-simulator source code, leading to improvements in speed and accuracy.
Keywords :
SPICE; power electronics; semiconductor device models; semiconductor diodes; SPICE3; circuit-simulation model; device physics; power bipolar diode; reverse-recovery model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930933
