Title :
Lumped element 12 GHz LNA MMIC using InGaAs/GaAs MODFETs with optimised gate width and reactive feedback
Author :
Bosch, Ricard ; Tasker, P.J. ; Schlechtweg, Michael ; Braunstein, J. ; Reinert, Wolfgang
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
7/22/1993 12:00:00 AM
Abstract :
A two-stage 12 GHz LNA has been realised as a lumped element MMIC on GaAs substrates using In0.25Ga0.75As channel PM-MODFETs. The gain is >17 dB and noise figure is <1.25 dB. Input (output) match is better than -21 DB (-14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.
Keywords :
III-V semiconductors; MMIC; feedback; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 1.25 dB; 12 GHz; 17 dB; GaAs substrates; InGaAs-GaAs; LNA MMIC; MODFETs; SHF; low noise amplifier; lumped element; optimised gate width; reactive feedback; two-stage LNA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930934
