• DocumentCode
    1045793
  • Title

    Physical Mechanisms of Ion-Induced Stuck Bits in the Hyundai 16M ,\\times, 4 SDRAM

  • Author

    Edmonds, L.D. ; Scheick, L.Z.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    3265
  • Lastpage
    3271
  • Abstract
    It was previously thought that stuck bits in the Hyundai 16M times 4 SDRAM were caused by micro-dose. It is argued here that the correct mechanism is micro (i.e., from a single particle hit) displacement damage, which creates a leakage current that drains the storage capacitor.
  • Keywords
    DRAM chips; radiation hardening (electronics); SDRAM; displacement damage; ion-induced stuck bits; leakage current; single event effects; storage capacitor; Capacitors; Degradation; Leakage current; Logic circuits; Logic testing; Performance evaluation; Propulsion; Protons; SDRAM; Space technology; Displacement damage; single event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2006902
  • Filename
    4723769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045793