DocumentCode :
1045876
Title :
High-frequency limitations of abrupt-junction FET´s
Author :
Das, Mukunda B. ; Schmidt, Pierre
Author_Institution :
Pennsylvania State University, University Park, Pa.
Volume :
20
Issue :
9
fYear :
1973
fDate :
9/1/1973 12:00:00 AM
Firstpage :
779
Lastpage :
792
Abstract :
This paper represents analytical results concerning the high-frequency limitations of FET\´s of junction-gate or Schottky-gate constructions. The intrinsic 
parameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both the intrinsic and extrinsic resistance-capacitance elements are presented and used to calculate the power-gain and frequency limitations of FET\´s.
parameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both the intrinsic and extrinsic resistance-capacitance elements are presented and used to calculate the power-gain and frequency limitations of FET\´s.Keywords :
Admittance; Cutoff frequency; FETs; Laboratories; Parasitic capacitance; Power transmission lines; Propagation constant; Solid state circuits; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17746
Filename :
1477403
Link To Document :
