• DocumentCode
    1045943
  • Title

    Characterisation of poly-Si/SiO2/Si

  • Author

    Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T.

  • Volume
    29
  • Issue
    20
  • fYear
    1993
  • Firstpage
    1758
  • Lastpage
    1759
  • Abstract
    The structure of polycrystalline silicon (poly-Si)/SiO2/Si
  • Keywords
    elemental semiconductors; ellipsometry; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; surface topography measurement; thickness measurement; Bruggeman effective medium approximation model; Si-SiO 2-Si; VASE results; composition; film thicknesses; polysilicon; top surface roughness; variable-angle spectroscopic ellipsometry;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931171
  • Filename
    274899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1045943