DocumentCode
1045948
Title
Study of Latent Damage in Power MOSFETs Caused by Heavy Ion Irradiation
Author
Ikeda, Naomi ; Kuboyama, Satoshi ; Satoh, Yohei ; Tamura, Takashi
Author_Institution
Japan Aerosp. Exploration Agency, Tsukuba
Volume
55
Issue
6
fYear
2008
Firstpage
3388
Lastpage
3393
Abstract
The latent damages were investigated for power MOSFETs irradiated by high LET heavy ions. It was demonstrated that the post irradiation leakage current in damaged gate oxide was determined by the initial gate stress after the irradiation and the damage was stable even after a million of gate stress repetition.
Keywords
leakage currents; power MOSFET; radiation effects; damaged gate oxide; heavy ion irradiation; high LET heavy ions; initial gate stress; latent damage; post irradiation leakage current; power MOSFET; Dielectric breakdown; Electric breakdown; Epitaxial layers; Leakage current; MOSFETs; Neck; Prototypes; Stress; Synchrotrons; Voltage; Heavy ion; latent damage; power MOSFET;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2007902
Filename
4723784
Link To Document