DocumentCode :
1045997
Title :
An integrated wide-band varactor-tuned Gunn oscillator
Author :
Gough, Robert A. ; Newton, Barrie H
Author_Institution :
University of Bradford, Bradford, England
Volume :
20
Issue :
10
fYear :
1973
fDate :
10/1/1973 12:00:00 AM
Firstpage :
863
Lastpage :
865
Abstract :
A report is made of a thin-film varactor-tuned Gunn effect oscillator in X band employing unencapsulated diodes. The Gunn device, which is an inverted mesa type, is mounted off the substrate on a copper header and this arrangement can dissipate 7 W without the Gunn device suffering thermal damage. The varactor is a beam-lead silicon p+nn+IMPATT diode connected in series with the Gunn device. A circulator is integrated with the oscillator to provide load isolation, and tuning ranges in excess of 2 GHz are reported. Good agreement exists between calculated and measured values of oscillator tuning range.
Keywords :
Copper; Diodes; Gunn devices; Oscillators; Silicon; Substrates; Transistors; Tuning; Varactors; Wideband;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17759
Filename :
1477416
Link To Document :
بازگشت