DocumentCode
1046043
Title
Reduction of p-doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping
Author
Kojima, Keisuke ; Morgan, R.A. ; Mullaly, T. ; Guth, G.D. ; Focht, M.W. ; Leibenguth, R.E. ; Asom, M.T.
Author_Institution
Solid State Technol. Center, AT&T Bell Lab., Breinigsville, PA, USA
Volume
29
Issue
20
fYear
1993
Firstpage
1771
Lastpage
1772
Abstract
Reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differential resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.
Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; semiconductor doping; semiconductor lasers; GaAs-AlGaAs; delta doping; differential resistance; efficiency; p-doped mirror electrical resistance; peak output power; threshold current; vertical-cavity surface-emitting lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931179
Filename
274908
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