Title :
Reduction of p-doped mirror electrical resistance of GaAs/AlGaAs vertical-cavity surface-emitting lasers by delta doping
Author :
Kojima, Keisuke ; Morgan, R.A. ; Mullaly, T. ; Guth, G.D. ; Focht, M.W. ; Leibenguth, R.E. ; Asom, M.T.
Author_Institution :
Solid State Technol. Center, AT&T Bell Lab., Breinigsville, PA, USA
Abstract :
Reports the reduction of p-mirror electrical resistance using a very simple delta doping technique. The differential resistance was reduced almost by half, and the peak output power was increased by about 40% with delta doping. No significant difference was observed in threshold current and efficiency.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; semiconductor doping; semiconductor lasers; GaAs-AlGaAs; delta doping; differential resistance; efficiency; p-doped mirror electrical resistance; peak output power; threshold current; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931179
