DocumentCode :
1046046
Title :
The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits
Author :
Pease, Ronald L. ; Adell, Philippe Claude ; Rax, Bernard G. ; Chen, Xiao Jie ; Barnaby, Hugh J. ; Holbert, Keith E. ; Hjalmarson, Harold P.
Author_Institution :
RLP Res., Los Lunas, NM
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
3169
Lastpage :
3173
Abstract :
It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (radiation effects in oxides and semiconductors).
Keywords :
bipolar transistors; hydrogen; integrated circuits; radiation effects; H; bipolar linear circuits; enhanced low dose rate sensitivity; low dose rate responses; pnp transistors; radiation effects in oxides and semiconductors; total dose response; Bipolar transistor circuits; Circuit testing; Degradation; Electronic packaging thermal management; Hydrogen; Ionizing radiation; Linear circuits; Radiation effects; Thermal stresses; Voltage; Dose rate; enhanced low-dose rate sensitivity; hydrogen; interface traps; radiation effects; total ionizing dose; voltage comparator;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2006478
Filename :
4723793
Link To Document :
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