DocumentCode :
1046135
Title :
Analysis of Commercial Trench Power MOSFETs\´ Responses to 
Irradiation
Author :
Liu, Sandra ; DiCienzo, Christopher ; Bliss, Martin ; Zafrani, Max ; Boden, Milton ; Titus, Jeffrey L.
Author_Institution :
Int. Rectifier Corp., El Segundo, CA
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
3231
Lastpage :
3236
Abstract :
This paper presents a detailed analysis of commercial trench power MOSFET responses to Co60 irradiation of all key d.c. electrical test parameters. Charge trapping in the gate oxide causes the threshold voltage (V TH) to shift, which, in turn, accounts for most of the degradation exhibited by the device after irradiation.
Keywords :
power MOSFET; radiation effects; Co60 irradiation; charge trapping; commercial trench power MOSFET; d.c. electrical test parameters; gate oxide; threshold voltage; Cranes; Degradation; Focusing; Image analysis; Ionizing radiation; MOSFETs; Rectifiers; Space technology; Testing; Threshold voltage; Total ionizing dose (TID); trench power MOSFET;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2008991
Filename :
4723800
Link To Document :
