Title :
Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits
Author :
Seabaugh, A.C. ; Taddiken, A.H. ; Beam, E.A., III ; Randall, J.N. ; Kao, Y.C. ; Newell, B.
Author_Institution :
Central Res. Lab., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The first resonant tunnelling bipolar transistor integrated circuits operating at room temperature are demonstrated. The circuits are composed of cointegrated resonance tunnelling bipolar transistors and double heterojunction bipolar transistors based on InP substrates. Both a three-transistor XNOR and a seven-transistor XOR logic gate have been demonstrated using a 3 V power supply.
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; integrated logic circuits; logic gates; resonant tunnelling devices; 3 V; InP substrates; RTBT; XNOR logic gate; XOR logic gate; bipolar transistor integrated circuits; double heterojunction bipolar transistors; resonant tunnelling bipolar transistor; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931199
