DocumentCode
104628
Title
Probabilistic model for nanocell reliability evaluation in presence of transient errors
Author
Kumawat, Renu ; Sahula, Vineet ; Gaur, Manoj Singh
Author_Institution
Dept. of Electron. & Commun. Eng., Manipal Univ., Jaipur, India
Volume
9
Issue
4
fYear
2015
fDate
7 2015
Firstpage
213
Lastpage
220
Abstract
In this study, the authors propose a novel extended continuous time birth-death model for reliability analysis of a nanocell device. A nanocell consists of conducting nanoparticles connected via randomly placed self-assembled monolayer of molecules. These molecules behave as a negative differential resistor. The mathematical expression for expected nanocell lifetime and its availability, in presence of transient errors is computed. On the basis of the model, an algorithm is developed and implemented in MATLAB, PERL and HSPICE, to automatically generate the proposed model representation for a given nanocell. It is used to estimate the success_ratio as well as the nanocell reliability, while considering the uncertainties induced by transient errors. The theoretical results for reliability are validated by simulating HSPICE model of nanocell in presence of varying defect rates. It is observed that the device reliability increases with increase in the number of nanoparticles and molecules. A lower and upper bounds for nanocell reliability are calculated in theory which is validated in simulations.
Keywords
SPICE; molecular electronics; nanoelectronics; nanoparticles; probability; reliability; resistors; HSPICE model; MATLAB; PERL; extended continuous time birth-death model; model representation; nanocell device reliability analysis; nanoparticles; negative differential resistor; probabilistic model; self-assembled monolayer; transient error;
fLanguage
English
Journal_Title
Computers & Digital Techniques, IET
Publisher
iet
ISSN
1751-8601
Type
jour
DOI
10.1049/iet-cdt.2014.0124
Filename
7127186
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