Ion Beam Induced Charge Studies of CdZnTe Grown by Modified Vertical Bridgman Method

Author

Veale, M.C. ; Sellin, P.J. ; Parkin, J. ; Lohstroh, A. ; Davies, A.W. ; Seller, P.

Author_Institution

Univ. of Surrey, Guildford

Volume

55

Issue

6

fYear

2008

Firstpage

3741

Lastpage

3745

Abstract

Ion beam induced charge (IBIC) and time resolved digital IBIC techniques have been used to map the electronic properties of CdZnTe manufactured by Yinnel Tech Inc. The 2 MeV proton scanning microbeam at the University of Surrey Ion Beam Centre was used to map the charge transport properties of both holes and electrons at room temperature. The electron response of the detector showed good uniformity whereas the hole response showed significant variations across the bulk.

Keywords

II-VI semiconductors; cadmium compounds; carrier mobility; crystal growth from melt; electron mobility; hole mobility; ion beam effects; semiconductor counters; semiconductor growth; zinc compounds; CdZnTe; carrier drift mobility; charge carrier trapping; charge transport properties; digital pulse processing; electron transport; electronic properties; hole transport; ion beam induced charge; proton scanning microbeam; semiconductor radiation detectors; temperature 293 K to 298 K; time resolved digital IBIC techniques; vertical Bridgman method; Charge carrier processes; Detectors; Ion beams; Particle beams; Preamplifiers; Protons; Pulse amplifiers; Pulse measurements; Temperature; Voltage; CdZnTe; IBIC; charge transport properties; digital pulse processing; trapping;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006745

Filename

4723834