Title :
The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversion
Author :
Van Overstraeten, Roger J. ; Declerck, G. ; Broux, George L.
Author_Institution :
Katholieke Universiteit Leuven, Leuven, Belgium
fDate :
12/1/1973 12:00:00 AM
Abstract :
The classical theory of the MOS transistor operating in weak inversion, attributes the slope of the In IDversus VGcurve to the capture of minority carriers by surface states. The discrepancy between the Nssvalues given by this theory and by independentt surface states measuring techniques is explained by the influence of surface potential fluctuations. These fluctuations are caused by the statistical distribution of the oxide charge.
Keywords :
Current measurement; Density measurement; Fluctuations; Gaussian distribution; MOS capacitors; MOSFETs; Probability; Statistical distributions; Surface fitting; Virtual colonoscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17810
