DocumentCode :
1046652
Title :
QSSProperties of multiple Oxide structures and a staggered Oxide C4D
Author :
Huang, J.S.T.
Volume :
20
Issue :
12
fYear :
1973
fDate :
12/1/1973 12:00:00 AM
Firstpage :
1172
Lastpage :
1173
Keywords :
Carrier confinement; Diode lasers; Gallium arsenide; Heterojunctions; Laser beams; Power generation; Power lasers; Semiconductor diodes; Semiconductor lasers; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17820
Filename :
1477477
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1046652
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