Title :
Barrier model for carrier transport at weakly inverted Si surfaces
Author :
Muller, R.S. ; Chen, J.T.C.
fDate :
12/1/1973 12:00:00 AM
Keywords :
Carrier confinement; Diode lasers; Gallium arsenide; Heterojunctions; Laser beams; Laser modes; Power lasers; Semiconductor diodes; Semiconductor lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17822
