DocumentCode
1046672
Title
Barrier model for carrier transport at weakly inverted Si surfaces
Author
Muller, R.S. ; Chen, J.T.C.
Volume
20
Issue
12
fYear
1973
fDate
12/1/1973 12:00:00 AM
Firstpage
1172
Lastpage
1172
Keywords
Carrier confinement; Diode lasers; Gallium arsenide; Heterojunctions; Laser beams; Laser modes; Power lasers; Semiconductor diodes; Semiconductor lasers; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17822
Filename
1477479
Link To Document