Title :
External cavity operation of GaAs diode lasers
Author :
Rossi, J.A. ; Chinn, S.R. ; Heckscher, H. ; Stillman, G.E.
fDate :
12/1/1973 12:00:00 AM
Keywords :
Carrier confinement; Diode lasers; Gallium arsenide; Heterojunctions; Laser beams; Power generation; Power lasers; Semiconductor diodes; Semiconductor lasers; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17823
