DocumentCode :
1046900
Title :
Possible uses of charge-transfer devices and magnetic-domain devices in memory hierarchies
Author :
Anacker, Wilhelm
Author_Institution :
IBM Corporation, Yorktown Heights, N.Y.
Volume :
7
Issue :
3
fYear :
1971
fDate :
9/1/1971 12:00:00 AM
Firstpage :
410
Lastpage :
415
Abstract :
Characteristics of magnetic-domain device (MDD) and charge-transfer device (CTD) memory modules which appear technically feasible and desirable for use in computer applications are derived. The possible uses of these memories in the memory and storage subsystems of computers are discussed. The concept and measures of performance of memory hierarchies is outlined and possible improvements by incorporation of MDD and/or CTD memories in hierarchies employing conventional memories are addressed. A scheme comprising two hierarchy levels on the same chip is evaluated by using the derived performance measures.
Keywords :
Charge-transfer devices; Magnetic bubble devices; Magnetic domain devices; Magnetic memories; Memory hierarchies; Semiconductor memories; Character generation; Charge coupled devices; Circuits; Computer applications; Decoding; Electrodes; Magnetic devices; Magnetic domains; Semiconductor device measurement; Shift registers;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1971.1067124
Filename :
1067124
Link To Document :
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