DocumentCode :
1046925
Title :
Electron and hole impact ionization rates in GaAs
Author :
Stillman, G.E. ; Wolfe, C.M. ; Rossi, J.A. ; Foyt, A.G.
Volume :
20
Issue :
12
fYear :
1973
fDate :
12/1/1973 12:00:00 AM
Firstpage :
1177
Lastpage :
1178
Keywords :
Avalanche photodiodes; Charge carrier processes; Doping profiles; Force measurement; Gallium arsenide; Gold; Impact ionization; Schottky barriers; Schottky diodes; Superconducting device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17845
Filename :
1477502
Link To Document :
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