Title :
Electron and hole impact ionization rates in GaAs
Author :
Stillman, G.E. ; Wolfe, C.M. ; Rossi, J.A. ; Foyt, A.G.
fDate :
12/1/1973 12:00:00 AM
Keywords :
Avalanche photodiodes; Charge carrier processes; Doping profiles; Force measurement; Gallium arsenide; Gold; Impact ionization; Schottky barriers; Schottky diodes; Superconducting device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1973.17845
