Title :
Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO2 Roughened Surface
Author :
Lin, J.C. ; Su, Y.K. ; Chang, S.J. ; Lan, W.H. ; Huang, K.C. ; Cheng, Y.C. ; Lin, W.J.
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
Gallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 times 1013 cmldrHz1 /2ldrW-1 can be achieved from the PD with a rough surface.
Keywords :
III-V semiconductors; gallium compounds; nanoparticles; p-i-n photodiodes; surface roughness; titanium compounds; wide band gap semiconductors; GaN; TiO2; external quantum efficiency; gallium nitride p-i-n ultraviolet photodiodes; light absorption; surface roughness; titanium dioxide nanoparticles; Coatings; Gallium nitride; Leakage current; Light emitting diodes; PIN photodiodes; Rough surfaces; Substrates; Surface resistance; Surface roughness; Titanium; Gallium nitride (GaN); p-i-n; photodiodes (PDs); surface roughness; titanium dioxide (TiO$_{2}$);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.915620
