Title :
Comparison of nonlinear MESFET models for wideband circuit design
Author :
Tellez, Rodriguez ; Al-Daas, M. ; Mezher, K.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bradford Univ., UK
fDate :
3/1/1994 12:00:00 AM
Abstract :
The Curtice quadratic, Materka, Statz, and Rodriguez nonlinear models are compared from DC, CV, and RF points of view, to determine which is the most suitable for nonlinear wideband circuit design. For this comparison, GaAs MESFETs of various sizes are employed. These include devices of varying gate widths, gate lengths, number of fingers, and pinch-off voltages
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; DC comparison; GaAs; MESFET models; RF comparison; gate length; gate width; nonlinear models; pinchoff voltages; quadratic model; wideband circuit design; Capacitance; Circuit synthesis; Computational modeling; Fingers; Gallium arsenide; MESFET circuits; Predictive models; Radio frequency; Voltage; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
