Title :
Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET
Author :
Agrawal, Nidhi ; Thathachary, Arun V. ; Mahapatra, Santanu ; Datta, Soupayan
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., State College, PA, USA
Abstract :
In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InxGa1-xAs FinFET with varying Indium (x=0.53 , 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, In0.7Ga0.3As QW FinFET provides better performance than In0.53Ga0.47As bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that In0.7Ga0.3As QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 °C.
Keywords :
III-V semiconductors; MOSFET; carrier density; gallium arsenide; indium compounds; semiconductor device reliability; FinFET; PBTI reliability; carrier density; defect density; effective barrier height; effective transport mass; injection velocity; positive bias temperature instability; quantum confinement; temperature 85 degC; time 10 year; varying indium concentration; voltage 0.1 V; Aluminum oxide; FinFETs; Logic gates; Quantization (signal); Reliability; Stress; Threshold voltage; III-V FinFET; Positive Bias Temperature Instability (PBTI); Quantum Well; Time to Failure (TTF); positive bias temperature instability (PBTI); quantum well; time to failure (TTF);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2385055
