Title :
Effects of surface pretreatment of polysilicon electrode prior to Si3N4 deposition on the electrical characteristics of Si3N4 dielectric films
Author :
Yoon, G.W. ; Joshi, A.B. ; Kwong, D.L. ; Mathews, V.K. ; Thakur, R.P.S. ; Fazan, P.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated. Surface pretreatments consist of different combinations of HF clean, rapid thermal H2 -Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H2-Ar clean
Keywords :
CVD coatings; dielectric thin films; electric breakdown of solids; electron traps; integrated circuit technology; leakage currents; metal-insulator-semiconductor devices; nitridation; rapid thermal processing; semiconductor-insulator boundaries; silicon compounds; surface treatment; H2-Ar; HF; HF clean; RTN; Si; Si-SiO2-Si3N4; Si3N4 deposition; Si3N4 dielectric films; charge trapping characteristics; electrical characteristics; leakage current; poly-Si; polysilicon electrode; rapid thermal H2-Ar clean; rapid thermal NH3-nitridation; surface pretreatment; time-dependent dielectric breakdown; Capacitors; Electric variables; Electrodes; Hafnium; Leakage current; Rapid thermal processing; Semiconductor films; Surface cleaning; Surface morphology; Surface treatment;
Journal_Title :
Electron Devices, IEEE Transactions on
