Title :
Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFET´s/SIMOX
Author :
Omura, Yasuhisa ; Izumi, Katsutoshi
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
3/1/1994 12:00:00 AM
Abstract :
We show experimentally that, in contrast to past simulation results, ISUB(max/)ID decreases with decreasing silicon layer thickness. This is supported by two-dimensional numerical simulation results: the above phenomenon results from the nonlocal effect and the slightly gate-overlapped LDD structure. We also show that the velocity overshoot effect can suppress ISUB(max/)ID in short-channel MOSFET/SIMOX. It is demonstrated that 0.1-μm-gate ultrathin-film nMOSFET/SIMOX will have a 10-year lifetime at the supply voltage of 1.6 V, although an abnormal degradation is indicated in such an extremely short-channel SOI device
Keywords :
SIMOX; hot carriers; insulated gate field effect transistors; semiconductor device models; simulation; thin film transistors; 0.1 micron; 1.6 V; 10 year; 2D simulation; SIMOX; Si; gate-overlapped LDD structure; hot-carrier immunity; nonlocal effect; short-channel SOI device; substrate current characteristics; two-dimensional numerical simulation; ultrathin-film MOSFET; velocity overshoot effect; Character recognition; Degradation; Doping; Hot carriers; Immune system; MOS devices; MOSFET circuits; Numerical simulation; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
