A New Model for the 1/f Noise of Polycrystalline Silicon Thin-Film Transistors

Author

Mingxiang Wang ; Ming Wang

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3258

Lastpage

3264

Abstract

An alternative model for the 1/f noise of polycrystalline Si thin-film transistors (poly-Si TFTs) is developed. The model adequately incorporates the grain boundary (GB) effect, different from previous work, however, the current noise is attributed to fluctuations in both carrier number and the GB barrier caused by carrier trapping/detrapping between the channel inversion carriers and the intragrain traps within the GB depletion region. The large dispersion of the trapping time constants in the 1/f noise behavior is attributed to the variation in carrier tunneling distance. The model fits the noise data very well in the low-drain current region. Based on the model, the effective density of states of the intragrain traps is obtained, providing a feasible method to evaluate the grain quality of poly-Si TFTs.

Keywords

electron traps; elemental semiconductors; grain boundaries; hole traps; semiconductor device models; semiconductor device noise; semiconductor thin films; silicon; thin film transistors; 1/f noise behavior; GB barrier; GB depletion region; GB effect; Si; carrier number; carrier trapping-detrapping; carrier tunneling distance; channel inversion carriers; grain boundary effect; intragrain traps; polycrystalline silicon thin-film transistors; state density; time constant trapping; 1f noise; Charge carrier processes; Mathematical model; Semiconductor device modeling; Thin film transistors; Tunneling; 1/f noise; intragrain traps; noise; polycrystalline Si thin-film transistors (poly-Si TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2336250

Filename

6862006