A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation

Author

Vasudevan, Vinita ; Vasi, J.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

383

Lastpage

390

Abstract

The authors have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in silicon dioxide due to radiation. The Poisson and continuity equations are solved both in the oxide and the semiconductor. In addition, in order to simulate charge trapping, trap rate equations using first-order trapping kinetics are solved in the oxide. This paper contains the numerical methods used in the simulation and results obtained using this simulator. One of the main results of this simulation is the presence of a lateral variation in the radiation-induced oxide charge in an MOS transistor irradiated with a drain bias

Keywords

electron traps; insulated gate field effect transistors; insulating thin films; radiation effects; semiconductor device models; silicon compounds; MOS transistors; Poisson equations; SiO₂; charge trapping; continuity equations; drain bias; first-order trapping kinetics; lateral variation; numerical methods; oxide charge buildup; radiation-induced oxide charge; time-dependent two-dimensional simulator; trap rate equations; two-dimensional numerical simulation; Charge carrier processes; Electron mobility; Electron traps; Gaussian distribution; Kinetic theory; MOSFETs; Numerical simulation; Poisson equations; Silicon compounds; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275224

Filename

275224