Title :
SiGe drift base bipolar transistor with self-aligned selective CVD-tungsten electrodes
Author :
Ugajin, M. ; Kunii, Y. ; Kuwagaki, Mamoru ; Konaka, Shinsuke
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
3/1/1994 12:00:00 AM
Abstract :
A new device and process technology is developed for high-speed SiGe epitaxial base transistors. A 60-nm SiGe epitaxial base and the selectively ion-implanted collector (SIC) structure enhance the cutoff frequency to about 40 GHz. Base resistance is minimized to 165 Ω (emitter area: 0.2×3 μm2), and an fMAX of 37.1 GHz is achieved by employing 0.2-μm EB lithography for the emitter window, selective CVD tungsten for the base electrode and a self-aligned oxide side wall for the emitter-to-base separation. Circuit simulations predict that this device could reduce the ECL gate delay to below 20 ps
Keywords :
Ge-Si alloys; bipolar transistors; chemical vapour deposition; electron beam lithography; ion implantation; semiconductor materials; semiconductor technology; solid-state microwave devices; tungsten; 0.2 micron; 165 ohm; 20 ps; 37.1 to 40 GHz; 60 nm; EB lithography; ECL gate delay; SiGe; SiGe epitaxial base; device technology; drift base bipolar transistor; epitaxial base transistors; high-speed device; process technology; selectively ion-implanted collector; self-aligned oxide side wall; self-aligned selective CVD W electrodes; Bipolar transistors; Circuit simulation; Cutoff frequency; Delay; Electrodes; Germanium silicon alloys; Lithography; Silicon carbide; Silicon germanium; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
