Title :
CMOS active pixel image sensor
Author :
Mendis, Sunetra ; Kemeny, Sabrina E. ; Fossum, Eric R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 μm double-poly, double-metal foundry CMOS process and is realized as a 128×128 array of 40 μm×40 μm pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications
Keywords :
CMOS integrated circuits; computer vision; image sensors; intelligent sensors; 128 pixel; 16384 pixel; 2.0 micron; CMOS; TTL compatible voltages; active pixel image sensor; double-poly double-metal foundry process; dynamic range; machine vision; noise; smart sensor; CMOS image sensors; CMOS process; Dynamic range; Foundries; Image sensors; Intelligent sensors; Low voltage; Pixel; Sensor arrays; Sensor phenomena and characterization;
Journal_Title :
Electron Devices, IEEE Transactions on
