DocumentCode
1047224
Title
CMOS active pixel image sensor
Author
Mendis, Sunetra ; Kemeny, Sabrina E. ; Fossum, Eric R.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
41
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
452
Lastpage
453
Abstract
A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 μm double-poly, double-metal foundry CMOS process and is realized as a 128×128 array of 40 μm×40 μm pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications
Keywords
CMOS integrated circuits; computer vision; image sensors; intelligent sensors; 128 pixel; 16384 pixel; 2.0 micron; CMOS; TTL compatible voltages; active pixel image sensor; double-poly double-metal foundry process; dynamic range; machine vision; noise; smart sensor; CMOS image sensors; CMOS process; Dynamic range; Foundries; Image sensors; Intelligent sensors; Low voltage; Pixel; Sensor arrays; Sensor phenomena and characterization;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.275235
Filename
275235
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