DocumentCode
1047241
Title
High performance symmetric double δ-doped GaAs/InGaAs/GaAs pseudomorphic HFETs grown by MOCVD
Author
Hsu, Wei-Chou ; Shieh, Hir-Ming ; Wu, Chang-Luen ; Wu, Tien-Shou
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
41
Issue
3
fYear
1994
fDate
3/1/1994 12:00:00 AM
Firstpage
456
Lastpage
457
Abstract
High performance double δ-doped GaAs/In0.25Ga0.75 As/GaAs pseudomorphic HFETs grown by low pressure MOCVD are reported. An extrinsic transconductance as high as 390 mS/mm, and a saturation current density as high as 980 mA/mm along with broad transconductance plateau at 300 K with a 1.5 μm gate length, are achieved
Keywords
chemical vapour deposition; doping profiles; gallium arsenide; indium compounds; power transistors; 1.5 micron; 300 K; GaAs-InGaAs-GaAs; GaAs/In0.25Ga0.75 As/GaAs pseudomorphic HFETs; broad transconductance plateau; extrinsic transconductance; gate length; low pressure MOCVD; saturation current density; symmetric double δ-doped devices; Current density; Current-voltage characteristics; Density measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Temperature; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.275237
Filename
275237
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