• DocumentCode
    1047250
  • Title

    Silicon—Aluminum gate complementary IGFET´s

  • Author

    Wang, Ruiqi ; DeMassa, T.A.

  • Volume
    21
  • Issue
    1
  • fYear
    1974
  • fDate
    1/1/1974 12:00:00 AM
  • Firstpage
    130
  • Lastpage
    130
  • Abstract
    Silicon-aluminum gate complementary IGFET´S have been fabricated with threshold voltages in the range of 0.5-0.7 V. This was accomplished by a two-source evaporation process in which aluminum and at least 10 percent silicon were used for the gate electrode.
  • Keywords
    Aluminum; Capacitance-voltage characteristics; Electrodes; Equations; Etching; Fabrication; Metallization; Silicon; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17877
  • Filename
    1477692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047250