Title :
Correlation of polysilicon thin-film transistor characteristics to defect states via thermal annealing
Author :
Chern, Horng Nan ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/1/1994 12:00:00 AM
Abstract :
Based on the response of electrical characteristics of hydro-genated polysilicon thin-film transistors (TFTs) to post-hydrogenation thermal annealing, the relationship of device parameters to deep states and tail states are distinguished. The deep states which affect the threshold voltage and subthreshold swing recover quickly, while the tail states which influence the leakage current and field effect mobility respond to the thermal annealing only after annealing temperatures exceeds 375°C for 30 min
Keywords :
annealing; carrier mobility; elemental semiconductors; semiconductor technology; silicon; thin film transistors; 30 min; 375 degC; Si; annealing temperatures; deep states; defect states; device parameters; electrical characteristics; field effect mobility; leakage current; polysilicon thin-film transistor; post-hydrogenation thermal annealing; subthreshold swing; tail states; threshold voltage; transistor characteristics; Annealing; Leakage current; Plasma chemistry; Plasma devices; Plasma measurements; Plasma properties; Plasma temperature; Tail; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
