Title :
Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory
Author :
Rajendran, Bipin ; Breitwisch, Matt ; Lee, Ming-Hsiu ; Burr, Geoffrey W. ; Shih, Yen-Hao ; Cheek, Roger ; Schrott, Alejandro ; Chen, Chieh-Fang ; Joseph, Eric ; Dasaka, Ravi ; Lung, H.-L. ; Lam, Chung
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY
Abstract :
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
Keywords :
phase change memories; PCM cells; RESET programming; dynamic resistance; phase change memory; programming current; Chalcogenide; electrothermal simulations; nonvolatile memory; phase-change memory (PCM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2010004
