• DocumentCode
    1047468
  • Title

    Avalanche multiplication factors in Ge and Si abrupt junctions

  • Author

    Spirito, Paolo

  • Author_Institution
    University of Naples, Naples, Italy
  • Volume
    21
  • Issue
    3
  • fYear
    1974
  • fDate
    3/1/1974 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    231
  • Abstract
    Analytical approximations for the multiplication factors Mnand Mpin Ge and Si one-sided abrupt junctions are given. The resulting expressions account for different α and β ionization rates and are quite accurate. With further approximations on the ionization integrals, very simple expressions of 1 -- 1/M both for electron and holes in the range of very low multiplication are obtained, depending from a single ionization rate.
  • Keywords
    Charge carrier processes; Dictionaries; Electron devices; Electrothermal effects; Impedance; Ionization; Operational amplifiers; Power amplifiers; Solid state circuits; Surface waves;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17900
  • Filename
    1477715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047468