• DocumentCode
    1047795
  • Title

    A UV-Erasable Stacked Diode-Switch Organic Nonvolatile Bistable Memory on Plastic Substrates

  • Author

    Lin, Heng-Tien ; Pei, Zingway ; Chen, Jun-Rong ; Chan, Yi-Jen

  • Author_Institution
    Electron. & Opto-Electron. Res. Labs., Ind. Technol. Res. Inst., Chungli
  • Volume
    30
  • Issue
    1
  • fYear
    2009
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    In this letter, we demonstrate a robust and stacked diode-switch organic nonvolatile bistable memory (DS-ONBM) using polymer-chain-stabilized gold nanoparticles on a plastic substrate in ambient air. The absorption spectrum of the gold nanoparticles shows ultraviolet (UV) absorption. Therefore, UV light is used to erase data in the DS-ONBM. The data in the memory can be retained for more than ten days in the air. The estimated retention time is nearly a year. This DS-ONBM is demonstrated to read, write, and retain the data and is reusable by UV-light illumination. Hence, the UV-erasable DS-ONBM is fully applicable in printed electronics such as RFID tags.
  • Keywords
    diodes; gold; integrated memory circuits; nanoparticles; polymers; ultraviolet spectra; UV light illumination; UV-erasable bistable memory; absorption spectrum; diode-switch organic nonvolatile bistable memory; gold nanoparticles; plastic substrates; polymer chain; ultraviolet absorption; Diodes; Electromagnetic wave absorption; Gold; Lighting; Nanoparticles; Nonvolatile memory; Plastics; Polymers; RFID tags; Robustness; Diode switch; memory; retention time; ultraviolet (UV) erasable;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2009009
  • Filename
    4729631