DocumentCode :
1047795
Title :
A UV-Erasable Stacked Diode-Switch Organic Nonvolatile Bistable Memory on Plastic Substrates
Author :
Lin, Heng-Tien ; Pei, Zingway ; Chen, Jun-Rong ; Chan, Yi-Jen
Author_Institution :
Electron. & Opto-Electron. Res. Labs., Ind. Technol. Res. Inst., Chungli
Volume :
30
Issue :
1
fYear :
2009
Firstpage :
18
Lastpage :
20
Abstract :
In this letter, we demonstrate a robust and stacked diode-switch organic nonvolatile bistable memory (DS-ONBM) using polymer-chain-stabilized gold nanoparticles on a plastic substrate in ambient air. The absorption spectrum of the gold nanoparticles shows ultraviolet (UV) absorption. Therefore, UV light is used to erase data in the DS-ONBM. The data in the memory can be retained for more than ten days in the air. The estimated retention time is nearly a year. This DS-ONBM is demonstrated to read, write, and retain the data and is reusable by UV-light illumination. Hence, the UV-erasable DS-ONBM is fully applicable in printed electronics such as RFID tags.
Keywords :
diodes; gold; integrated memory circuits; nanoparticles; polymers; ultraviolet spectra; UV light illumination; UV-erasable bistable memory; absorption spectrum; diode-switch organic nonvolatile bistable memory; gold nanoparticles; plastic substrates; polymer chain; ultraviolet absorption; Diodes; Electromagnetic wave absorption; Gold; Lighting; Nanoparticles; Nonvolatile memory; Plastics; Polymers; RFID tags; Robustness; Diode switch; memory; retention time; ultraviolet (UV) erasable;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2009009
Filename :
4729631
Link To Document :
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