DocumentCode :
104785
Title :
Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors
Author :
Nabanja, Sheila P. ; Kolodziejski, Leslie A. ; Petrich, Gale S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
49
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
731
Lastpage :
738
Abstract :
A model of the thermal oxidation kinetics that is based on the continuity equation is adapted to the fabrication of circular saturable Bragg reflector (SBR) mesa structures, as well as inverted mesa array structures. A comparison between theoretical calculations and experimental measurements shows good agreement, making the model a useful tool for the controllability of the structure-dependent oxidation process. The model is applied to the wet oxidation of buried AlAs layers for the fabrication of ultra-broadband, high index contrast, III-V/ AlxOy SBRs. The rate of oxidation is found to be dependent not only on the oxidation temperature, but also on oxidation time, mesa geometry, and AlAs layer thickness. The two distinct large-area SBR structures, the circular mesa and the inverted mesa, are fabricated.
Keywords :
III-V semiconductors; aluminium compounds; optical arrays; optical elements; optical fabrication; oxidation; AlAs-AlxOy; buried layers; circular mesa saturable Bragg reflector; continuity equation; controllability; inverted mesa array structures; inverted mesa saturable Bragg reflector; large-area SBR structures; lateral oxidation; layer thickness; mesa geometry; oxidation temperature; oxidation time; structure-dependent oxidation process; thermal oxidation kinetics; ultrabroadband high index contrast SBR; wet oxidation; Distributed Bragg reflectors; Fabrication; Furnaces; Gallium arsenide; Geometry; Mathematical model; Oxidation; Semiconductor process modeling; buried oxides; dielectric stacks; lateral oxidation; semiconductor photonic device fabrication;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2268536
Filename :
6531673
Link To Document :
بازگشت