Functional speed measurements of propagating devices utilizing cylindrical domains in orthoferrites and garnets

Functional speed, measurements have been made on field-access T-bar and Y-bar bubble devices utilizing flux-grown crystal platelets of Gd2.34Tb0.66Fe5O12, Eu2Er1Ga0.65Fe4.35O12, Sm0.55Tb0.45FeO3, and epitaxially grown films of Eu1Er2Ga0.7Fe4.3O12. Propagation rates of 250 kbit/s with bias margins of ±7 percent have been achieved with epitaxial garnet films. A propagating device utilizing an epitaxial garnet film has demonstrated a storage capability of 1.6 Mbit/in².The device, Which includes a propagation turn, has been worse case tested. This resulted in a bias margin of ±7 percent with a 25-Oe 100-kHz rotating in-plane field.