DocumentCode
1047931
Title
A new Λ-type negative resistance device of integrated complementary FET structure
Author
Kano, Gota ; Iwasa, Hitoo
Author_Institution
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume
21
Issue
7
fYear
1974
fDate
7/1/1974 12:00:00 AM
Firstpage
448
Lastpage
449
Abstract
A new type of negative resistance diode having a Λ-type I-V characteristic is presented. The device is constructed by a functional integration of two complementary FET´s of an n- and p-channel depletion mode. The operational principle together with some experimental results are described.
Keywords
Circuit synthesis; Diodes; Electrodes; Equations; FETs; Feedback circuits; Intrusion detection; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17946
Filename
1477761
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