Title :
A new Λ-type negative resistance device of integrated complementary FET structure
Author :
Kano, Gota ; Iwasa, Hitoo
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
fDate :
7/1/1974 12:00:00 AM
Abstract :
A new type of negative resistance diode having a Λ-type I-V characteristic is presented. The device is constructed by a functional integration of two complementary FET´s of an n- and p-channel depletion mode. The operational principle together with some experimental results are described.
Keywords :
Circuit synthesis; Diodes; Electrodes; Equations; FETs; Feedback circuits; Intrusion detection; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17946
