Title :
Design for silicon infrared sensing MOSFET
Author :
Forbes, Leonard ; Yeargan, Jerry R.
Author_Institution :
University of Arkansas, Fayetteville, Ark.
fDate :
8/1/1974 12:00:00 AM
Abstract :
A design is described for an infrared sensing MOSFET (IRFET). The high-gain high-resolution dc or static readout and inherent integrating and memory characteristics of the infrared sensing MOSFET should make it ideal for infrared imaging and target tracking applications employing a large-scale integrated array. The devices are based on silicon MOSFET technology where large-scale integrated arrays are routinely fabricated.
Keywords :
Energy states; Impurities; Infrared imaging; Ionization; Large scale integration; MOSFET circuits; Read only memory; Silicon; Space charge; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17950
